Search results for "CdZnTe detectors"

X-ray response of CdZnTe detectors grown by the vertical Bridgman technique: Energy, temperature and high flux effects

2016

Abstract Nowadays, CdZnTe (CZT) is one of the key materials for the development of room temperature X-ray and gamma ray detectors and great efforts have been made on both the device and the crystal growth technologies. In this work, we present the results of spectroscopic investigations on new boron oxide encapsulated vertical Bridgman (B-VB) grown CZT detectors, recently developed at IMEM-CNR Parma, Italy. Several detectors, with the same electrode layout (gold electroless contacts) and different thicknesses (1 and 2.5 mm), were realized: the cathode is a planar electrode covering the detector surface (4.1×4.1 mm2), while the anode is a central electrode (2×2 mm2) surrounded by a guard-rin…

Digital fast pulse shape and height analysis on cadmium-zinc-telluride arrays for high-flux energy-resolved X-ray imaging.

2017

Cadmium-zinc-telluride (CZT) arrays with photon-counting and energy-resolving capabilities are widely proposed for next-generation X-ray imaging systems. This work presents the performance of a 2â...mm-thick CZT pixel detector, with pixel pitches of 500 and 250â...μm, dc coupled to a fast and low-noise ASIC (PIXIE ASIC), characterized only by the preamplifier stage. A custom 16-channel digital readout electronics was used, able to digitize and process continuously the signals from each output ASIC channel. The digital system performs on-line fast pulse shape and height analysis, with a low dead-time and reasonable energy resolution at both low and high fluxes. The spectroscopic response …

Dual-polarity pulse processing and analysis for charge-loss correction in cadmium–zinc–telluride pixel detectors

2018

Charge losses at the inter-pixel gap are typical drawbacks in cadmium–zinc–telluride (CZT) pixel detectors. In this work, an original technique able to correct charge losses occurring after the application of charge-sharing addition (CSA) is presented. The method, exploiting the strong relation between the energy after CSA and the beam position at the inter-pixel gap, allows the recovery of charge losses and improvements in energy resolution. Sub-millimetre CZT pixel detectors were investigated with both uncollimated radiation sources and collimated synchrotron X-rays, at energies below and above the K-shell absorption energy of the CZT material. The detectors are DC coupled to fast and low…

CdZnTe Detectors for Astrophysical and Medical Applications

2010

Recent advances in the development of high-resolution 3D cadmium-zinc-telluride drift strip detectors.

2020

In the last two decades, great efforts have been made in the development of 3D cadmium–zinc–telluride (CZT) detectors operating at room temperature for gamma-ray spectroscopic imaging. This work presents the spectroscopic performance of new high-resolution CZT drift strip detectors, recently developed at IMEM-CNR of Parma (Italy) in collaboration with due2lab (Italy). The detectors (19.4 mm × 19.4 mm × 6 mm) are organized into collecting anode strips (pitch of 1.6 mm) and drift strips (pitch of 0.4 mm) which are negatively biased to optimize electron charge collection. The cathode is divided into strips orthogonal to the anode strips with a pitch of 2 mm. Dedicated pulse processing analysis…

Development of new CdZnTe detectors for room-temperature high-flux radiation measurements

2017

Recently, CdZnTe (CZT) detectors have been widely proposed and developed for room-temperature X-ray spectroscopy even at high fluxes, and great efforts have been made on both the device and the crystal growth technologies. In this work, the performance of new travelling-heater-method (THM)-grown CZT detectors, recently developed at IMEM-CNR Parma, Italy, is presented. Thick planar detectors (3 mm thick) with gold electroless contacts were realised, with a planar cathode covering the detector surface (4.1 mm × 4.1 mm) and a central anode (2 mm × 2 mm) surrounded by a guard-ring electrode. The detectors, characterized by low leakage currents at room temperature (4.7 nA cm−2 at 1000 V cm−1), a…

Electrical properties of Au/CdZnTe/Au detectors grown by the boron oxide encapsulated Vertical Bridgman technique

2016

Abstract In this work we report on the results of electrical characterization of new CdZnTe detectors grown by the Boron oxide encapsulated Vertical Bridgman technique (B-VB), currently produced at IMEM-CNR (Parma, Italy). The detectors, with gold electroless contacts, have different thicknesses (1 and 2.5 mm) and the same electrode layout, characterized by a central anode surrounded by a guard-ring electrode. Investigations on the charge transport mechanisms and the electrical contact properties, through the modeling of the measured current–voltage ( I – V ) curves, were performed. Generally, the detectors are characterized by low leakage currents at high bias voltages even at room tempera…

Charge Sharing and Cross Talk Effects in High-Z and Wide-Bandgap Compound Semiconductor Pixel Detectors

2023

Intense research activities have been made in the development of high-Z and wide-bandgap compound semiconductor pixel detectors for the next generation X-ray and gamma ray spectroscopic imagers. Cadmium telluride (CdTe) and cadmium-zinc-telluride (CdZnTe or CZT) pixel detectors have shown impressive performance in X-ray and gamma ray detection from energies of few keV up to 1 MeV. Charge sharing and cross-talk phenomena represent the typical drawbacks in sub-millimeter pixel detectors, with severe distortions in both energy and spatial resolution. In this chapter, we review the effects of these phenomena on the response of CZT/CdTe pixel detectors, with particular emphasis on the current st…

Progress in the Development of CdTe and CdZnTe Semiconductor Radiation Detectors for Astrophysical and Medical Applications

2009

Over the last decade, cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) wide band gap semiconductors have attracted increasing interest as X-ray and gamma ray detectors. Among the traditional high performance spectrometers based on silicon (Si) and germanium (Ge), CdTe and CdZnTe detectors show high detection efficiency and good room temperature performance and are well suited for the development of compact and reliable detection systems. In this paper, we review the current status of research in the development of CdTe and CdZnTe detectors by a comprehensive survey on the material properties, the device characteristics, the different techniques for improving the overall detector…